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Conferència "Peripheral circuits for WBG semiconductor devices"

Els dies 26 i 27 de juny a l'ETSEIB, el Dr. Ramkrishan Maheshwari, professor visitant al departament d'Enginyeria Electrònica, farà conferències a l'aula 9.7 de l'Escola.

27/06/2024 de 16:00 a 18:00
Room 9.7, 9th floor, H building, ETSEIB
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  • Title: "Peripheral circuits for WBG semiconductor devices".
  • Speaker: Dr. Ramkrishan Maheshwari.
  • Date: 27th of June 2024, 16:00h -18:00h.
  • Location: Room 9.7, 9th floor, H building, ETSEIB.


New wide bandgap (WBG) semiconductors-based power devices are used to improve the efficiency of the power electronics converters. Typically, these devices switch at very high dv/dt and di/dt and require special attention while designing peripheral circuits and controllers. Some important aspects of the peripheral circuit design will be discussed in the lectures.

The lecture will discuss the gate drive circuits for high switching frequency applications. The gate driver circuit power consumption is directly proportional to the switching frequency. The power taken from the gate supply is dissipated in the gate resistance of the conventional gate driver (CGD) circuit. Instead of dissipating all the gate driver energy, some energy can be recovered or recycled by utilizing the principle of resonance. This reduces the net power being taken from the gate supply. This lecture discusses a resonant gate driver (RGD) circuit which consumes less power compared to the CGD circuit at high switching frequencies.

In addition, the lecture will discuss the current sense circuit for measuring the device current. A PCB-coil based current sensor design featuring power-loop stray inductance characterization will be discussed. The design is for the current sensing of a discrete TO-247 silicon carbide MOSFET. The design utilizes finite element method (FEM) simulations to determine a suitable position for the PCB coil on the double pulse test (DPT) board. In addition, the circuit used for processing the output of the coil will also be discussed.

Short Bio of Presenter

Ramkrishan Maheshwari (S'10 – M'11 – SM'18) received the Master of Engineering (M.E.) degree in electrical engineering from the Indian Institute of Science (IISc), Bangalore, India in 2005 and the Ph.D. degree in electrical engineering from Aalborg University, Aalborg, Denmark in 2012.
From 2005 to 2008, he was with Honeywell Technology Solution Lab, Bangalore, India. From 2012 to 2014, he was with the Department of Energy Technology, Aalborg University, Denmark. From 2014 to 2019, he was with the Department of Electrical Engineering, Indian Institute of Technology, New Delhi, India. He is currently working as an Associate Professor with the Center of Industrial Electronics, University of Southern Denmark, Soenderborg, Denmark. His research interests include modeling and control of power converters for various applications.